vishay siliconix si8800edb document number: 66700 s11-1145-rev. b, 13-jun-11 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 20 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? ultra small 0.8 mm x 0.8 mm outline ? ultra thin 0.357 mm height ? typical esd protection 1500 v ? compliant to rohs directive 2002/95/ec applications ? portable devices such as cell phones, smart phones and mp3 players - load switch - small signal switch notes: a. surface mounted on 1" x 1" fr4 board with full copper, t = 5 s. b. surface mounted on 1" x 1" fr4 board with minimum copper, t = 5 s. c. refer to ipc/jedec (j-std-020c), no manual or hand soldering. d. maximum under steady state conditions is 185 c/w. e. maximum under steady state conditions is 330 c/w. product summary v ds (v) r ds(on) ( ? )i d (a) a q g (typ.) 20 0.080 at v gs = 4.5 v 2.8 3.2 nc 0.090 at v gs = 2.5 v 2.6 0.105 at v gs = 1.8 v 2.4 0.150 at v gs = 1.5 v 2.0 micro foot device markin g : 8 00 xxx = date/lot tracea b ility code orderin g information: si 88 00edb-t2-e1 (lead (p b )-free and halogen-free) b u mp side v ie w backside v ie w xxx 8 00 s d g s 1 2 4 3 d s g r absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) t a = 25 c i d 2.8 a a t a = 70 c 2.2 a t a = 25 c 2 b t a = 70 c 1.6 b pulsed drain current i dm 15 continuous source-drain diode current t a = 25 c i s 0.7 a t a = 25 c 0.4 b maximum power dissipation t a = 25 c p d 0.9 a w t a = 70 c 0.6 a t a = 25 c 0.5 b t a = 70 c 0.3 b operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) c 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a, d t ? 5 s r thja 105 135 c/w maximum junction-to-ambient b, e 200 260
www.vishay.com 2 document number: 66700 s11-1145-rev. b, 13-jun-11 vishay siliconix si8800edb this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 % b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 20 v v ds temperature coefficient ? v ds /t j i d = 250 a 18 mv/c v gs(th) temperature coefficient ? v gs(th) /t j - 2.3 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.4 1 v gate-source leakage i gss v ds = 0 v, v gs = 4.5 v 0.5 a v ds = 0 v, v gs = 8 v 6 zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 v ds = 20 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds ?? 5 v, v gs = 4.5 v 10 a drain-source on-state resistance a r ds(on) v gs ?? 4.5 v, i d = 1 a 0.066 0.080 ? v gs ?? 2.5 v, i d = 1 a 0.072 0.090 v gs ?? 1.8 v, i d = 1 a 0.082 0.105 v gs ?? 1.5 v, i d = 0.5 a 0.095 0.150 forward transconductance a g fs v ds = 10 v, i d = 1 a 10 s dynamic b total gate charge q g v ds = 10 v, v gs = 8 v, i d = 1 a 5.5 8.3 nc v ds = 10 v, v gs = 4.5 v, i d = 1 a 3.2 5 gate-source charge q gs 0.42 gate-drain charge q gd 0.5 gate resistance r g f = 1 mhz 1 k ? tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 10 ? i d ? 1 a, v gen = 4.5 v, r g = 1 ? 65 130 ns rise time t r 85 170 turn-off delay time t d(off) 900 1800 fall time t f 350 700 tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 10 ? i d ? 1 a, v gen = 8 v, r g = 1 ? 25 50 rise time t r 40 80 turn-off delay time t d(off) 1100 2200 fall time t f 350 700 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 0.7 a pulse diode forward current i sm 15 body diode voltage v sd i s = 1 a, v gs ?? 0 v 11.5v body diode reverse recovery time t rr i f = 1 a, di/dt = 100 a/s, t j = 25 c 13 25 ns body diode reverse recovery charge q rr 510nc reverse recovery fall time t a 8 ns reverse recovery rise time t b 5
document number: 66700 s11-1145-rev. b, 13-jun-11 www.vishay.com 3 vishay siliconix si8800edb this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) gate current vs. gate-source voltage output characteristics on-resistance vs. drain current - gate current (ma) i gss v gs - gate-to-source voltage (v) 0.0 0.3 0.6 0.9 1.2 1.5 0 3 6 9 12 15 t j = 25 c 0 3 6 9 12 15 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =5vthru2v v gs =1v v gs =1.5v v ds - drain-to-source voltage (v) - drain current (a) i d 0.00 0.03 0.06 0.09 0.12 0.15 0 3 6 9 12 15 v gs =1.8v v gs =1.5v v gs =2.5v v gs =4.5v - on-resistance ( ) r ds(on) i d - drain current (a) gate current vs. gate-source voltage transfer characteristics gate charge - gate current (a) i gss v gs - gate-to-source voltage (v) 10 -11 10 -9 10 -7 10 -5 10 -3 10 -1 0 3 6 9 12 15 t j = 150 c t j = 25 c 0 1 2 3 4 5 0.0 0.3 0.6 0.9 1.2 1.5 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-source voltage (v) - drain current (a) i d 0 2 4 6 8 0123456 i d =1a v ds =5v v ds =16v v ds =10v - gate-to-source voltage (v) q g - total gate charge (nc) v gs
www.vishay.com 4 document number: 66700 s11-1145-rev. b, 13-jun-11 vishay siliconix si8800edb this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 - 50 - 25 0 25 50 75 100 125 150 v gs =1.5v;i d =0.5a t j - junction temperature (c) (normalized) - on-resistance r ds(on) v gs =4.5v,v gs =2.5v,v gs =1.8v;i d =1a 0.04 0.06 0.08 0.10 0.12 0.14 012345 i d = 0.5 a; t j = 25 c i d = 1.5 a; t j = 125 c i d = 0.5 a; t j = 125 c i d = 1.5 a; t j = 25 c - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) source-drain diode orward voltage threshold voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.1 10 t j = 25 c t j = 150 c v sd - source-to-drain voltage (v) - source current (a) i s 0.2 0.3 0.4 0.5 0.6 0.7 0.8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a (v) v gs(th) t j - temperature (c) single pulse power (junction-to-ambient) 0 2 4 6 8 10 12 14 power (w) time (s) 10 1000 0.1 0.01 0.001 100 1
document number: 66700 s11-1145-rev. b, 13-jun-11 www.vishay.com 5 vishay siliconix si8800edb this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) note: when mounted on 1" x 1" fr4 with full copper. * the power dissipation p d is based on t j(max) = 150 c, using junction-to-ambient thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. safe operating area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single pulse limited by r ds(on) * bvdss limited 1ms 100 s 10 ms v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specied - drain current (a) i d 100 ms, 1 s 10 s, dc current derating* 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 t a - ambient temperature (c) i d - drain current (a) power derating 0.0 0.2 0.4 0.6 0.8 25 50 75 100 125 150 t a - ambient temperature (c) power dissipation (w)
www.vishay.com 6 document number: 66700 s11-1145-rev. b, 13-jun-11 vishay siliconix si8800edb this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) normalized thermal transient impedance, junction -to-ambient (on 1" x 1" fr4 board with maximum copper) 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 square wave pulse duration (s) normalized effective transient thermal impedance 1 0.1 0.01 t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja = 185 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. surface mounted duty cycle = 0.5 single pulse 0.02 0.05 normalized thermal transient impedance, junction-to-ambient (on 1" x 1" fr4 board with minimum copper) 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 square wave pulse duration (s) normalized effective transient thermal impedance 1 0.1 0.01 t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja = 330 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. surface mounted duty cycle = 0.5 single pulse 0.02 0.05
document number: 66700 s11-1145-rev. b, 13-jun-11 www.vishay.com 7 vishay siliconix si8800edb this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package outline micro foot 0.8 mm x 0. 8 mm: 4-bump (2 mm x 2 mm, 0.4 mm pitch) notes (unless otherwise specified): 1. all dimensions are in millimeters. 2. four (4) solder bumps are lead (pb)-f ree 95.5sn/3.8ag/0.7cu with diameter ? ? 0.165 mm to ? 0.185 mm. 3. backside surface is coated with a ti/ni/ag layer. 4. non-solder mask defined copper landing pad. 5. ? is location of pin 1. notes: a. use millimeters as the primary measurement. vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66700 . 4 x ? b d e s a a1 a2 s d e xxx mark on backside of die s g d s 800 3 4 1 2 e e 4 x ? 0.205 to 0.225 note 4 solder mask ~ ? 0.215 recommended land dim. millimeters a inches min. nom. max. min. nom. max. a 0.314 0.357 0.400 0.0124 0.0141 0.0157 a 1 0.127 0.157 0.187 0.0050 0.0062 0.0074 a 2 0.187 0.200 0.213 0.0074 0.0079 0.0084 b 0.165 0.175 0.185 0.0064 0.0068 0.0072 e 0.400 0.0157 s 0.180 0.200 0.220 0.0070 0.0078 0.0086 d 0.760 0.800 0.840 0.0299 0.0314 0.0330
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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